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Inventi Impact: Electronic Components

Articles

  • Inventi:eec/33225/20
    Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors
    Research 2021 : January - March
    Min-Gyu Shin, Kang-Hwan Bae, Hwan-Seok Jeong, Dae-Hwan Kim, Hyun-Seok Cha, Hyuck-In Kwon

    In this study, the effects of capping layers with different metals on the electrical performance\nand stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO\nTFTs exhibit a higher..............

    How to Cite this Article
    Attribution/ CC Compliant Citation:Shin, Min-Gyu, et al. \"Effects of Capping Layers with Different Metals on Electrical\nPerformance and Stability of p-Channel SnO Thin-Film Transistors.\" Micromachines 11.10 (2020): 917.\nhttps://doi.org/10.3390/mi11100917\nhttp://creativecommons.org/licenses/by/4.0/\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.\n
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